Title :
Processing and Defect Control in Advanced Ge Technologies
Author :
Claeys, C. ; Simoen, E. ; Satta, A. ; Opsomer, K. ; Meuris, M.
Author_Institution :
E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
Abstract :
To achieve the required drive performance for sub 32 nm technology nodes there is strong interest in exploring the use of Ge-based technologies. This paper reviews some important processing aspects from a defect control viewpoint. Attention is given to crystal growth, shallow junction formation and germanidation techniques, respectively. The main focus is on defect related aspects. The last section deals with the device performance and the impact of processing on device leakage current and low frequency noise behavior.
Keywords :
CMOS technology; Crystals; Dielectric substrates; Fabrication; Infrared detectors; Integrated circuit technology; Leakage current; Low-frequency noise; Process control; Silicon; Ge technology; LF noise; defect control; device performance; germanidation; leakage current; shallow junctions;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
DOI :
10.1109/EDST.2007.4289767
