• DocumentCode
    3261170
  • Title

    CMOS Fabricated by Hybrid-Orientation Technology (HOT)

  • Author

    Yang, Bin ; Yang, M. ; Fried, D.M. ; Sheraw, C.D. ; Waite, A. ; Nummy, K. ; Black, L. ; Kim, S.D. ; Yin, H. ; Kim, B. ; Narasimha, S. ; Chen, X. ; Khare, M. ; Luning, S. ; Agnello, P.

  • fYear
    2007
  • fDate
    3-4 June 2007
  • Firstpage
    8
  • Lastpage
    13
  • Abstract
    Hybrid-orientation technology (HOT), a novel planar CMOS approach that fabricates NMOS on (100) silicon surface and PMOS on (110) silicon surface to take advantage of the highest carrier mobilities on these surfaces, is reviewed. HOT module process flow, defects formed during the HOT module, HOT CMOS performance enhancement and its layout dependence, as well as the high Rext issue for (110) PMOS are discussed in this paper.
  • Keywords
    CMOS process; CMOS technology; Electron mobility; Fabrication; MOS devices; Silicides; Silicon compounds; Stress; Substrates; Surface morphology; Si(110) PMOS; external resistance (Rext); hybrid orientation technology (HOT); lateral doping abruptness; stress liner;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
  • Conference_Location
    Tsinghua University
  • Print_ISBN
    1-4244-1098-3
  • Electronic_ISBN
    1-4244-1098-3
  • Type

    conf

  • DOI
    10.1109/EDST.2007.4289768
  • Filename
    4289768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3261170