Title :
CMOS Fabricated by Hybrid-Orientation Technology (HOT)
Author :
Yang, Bin ; Yang, M. ; Fried, D.M. ; Sheraw, C.D. ; Waite, A. ; Nummy, K. ; Black, L. ; Kim, S.D. ; Yin, H. ; Kim, B. ; Narasimha, S. ; Chen, X. ; Khare, M. ; Luning, S. ; Agnello, P.
Abstract :
Hybrid-orientation technology (HOT), a novel planar CMOS approach that fabricates NMOS on (100) silicon surface and PMOS on (110) silicon surface to take advantage of the highest carrier mobilities on these surfaces, is reviewed. HOT module process flow, defects formed during the HOT module, HOT CMOS performance enhancement and its layout dependence, as well as the high Rext issue for (110) PMOS are discussed in this paper.
Keywords :
CMOS process; CMOS technology; Electron mobility; Fabrication; MOS devices; Silicides; Silicon compounds; Stress; Substrates; Surface morphology; Si(110) PMOS; external resistance (Rext); hybrid orientation technology (HOT); lateral doping abruptness; stress liner;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
DOI :
10.1109/EDST.2007.4289768
