DocumentCode :
3261271
Title :
Robust ESD Protection Solutions in CMOS/BiCMOS Technologies
Author :
Liou, Juin J. ; Salcedo, Javier A. ; Liu, Zhiwei
Author_Institution :
School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL, USA
fYear :
2007
fDate :
3-4 June 2007
Firstpage :
41
Lastpage :
45
Abstract :
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-LVTSCRs) for Electrostatic Discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Experimental results demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC.
Keywords :
BiCMOS integrated circuits; CMOS technology; Electrostatic discharge; IEC standards; Integrated circuit interconnections; Integrated circuit technology; Protection; Robust control; Robustness; Thyristors; Electrostatic discharge; holding voltage; latchup; silicon controlled rectifier; voltage snapback;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
Type :
conf
DOI :
10.1109/EDST.2007.4289774
Filename :
4289774
Link To Document :
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