Title :
Low Temperature Performance of Deep Submicron Germanium pMOSFETs
Author :
Dobbie, Andy ; Nicholas, Gareth ; Meuris, Marc ; Parker, Evan H.C. ; Whall, Terry E.
Author_Institution :
Nano-Silicon Group, Dept. of Physics, University of Warwick, Coventry, CV4 7AL, UK
Abstract :
The electrical characteristics of germanium (Ge) pMOSFETs with high-¿ dielectric and gate lengths down to 125nm have been studied as a function of temperature down to 77K. The effective hole mobility improves from 235cm2/Vs at room temperature to 490cm2/Vs at 77K due to the reduction of phonon scattering. We report a drive current enhancement of 1001 ¿A/¿m at 295K to 1394¿A/¿m at 77K for L = 125nm and VG - VT = VD = -1.5V and a reduction in the off-current by 1-2 decades. The decrease in the subthreshold slope from 100mV/dec to 37mV/dec at 77K would allow power supply voltage scaling, further reducing the off-state current, and making Ge transistors suitable candidates for low temperature CMOS applications.
Keywords :
Annealing; Capacitance-voltage characteristics; Cryogenics; Germanium; High-K gate dielectrics; Implants; MOSFETs; Optical scattering; Silicon; Temperature; Germanium (Ge); MOSFETs; cryogenic temperatures; high-k;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
DOI :
10.1109/EDST.2007.4289778
