M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM

Author

Xie, Dan ; Ren, Tianling ; Liu, Litian

Author_Institution

Institute of Microelectronics, Tsinghua University, Beijing, 100084, China. Email: xiedan@mail.tsinghua.edu.cn

fYear

2007

fDate

3-4 June 2007

Firstpage

74

Lastpage

77

Abstract

The ferroelectric memory (FEM) capacitors were prepared by depositing lanthanum-doped Bi4Ti3012: Bi3.4La0.6Ti3O12 (BLT) thin films on Si and SiO2/Si substrates using an silicon dioxide as a buffer layer. The C-V characterization of M/BLT/Si and M/BLT/SiO2/Si capacitors were studied. It is found that the charges in silicon injected into BLT ferroelectric films, and p-n injection effect existed between the film and Si (F-S) interface, which changed the polarization state in FEM capacitors. The introduction of SiO2 buffer layer could decrease the charge injection effect, and the polarization storage of FEM capacitors could be realized. A physical model based on the consideration energy-band theory has been constructed in explaining the p-n injection effect.

Keywords

Buffer layers; Capacitance-voltage characteristics; Capacitors; Ferroelectric films; Ferroelectric materials; Polarization; Semiconductor thin films; Silicon compounds; Sputtering; Substrates; Bismuth compounds; FeFET; Ferroelectric films; Ferroelectric memories capacitors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289781

Filename

4289781