High Performance 4H-SiC MESFETs with a Source Field Plated Structure

Author

Deng, Xiaochuan ; Zhang, Bo ; Li, Zhaoji ; Cheng, Zhuangliang

Author_Institution

State key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, 610054, China

fYear

2007

fDate

3-4 June 2007

Firstpage

78

Lastpage

81

Abstract

A new structure of 4H-SiC MESFET based on the source field plate technology is proposed in this paper. The source field plate has been applied not only to improve the breakdown voltage, but also to eliminate the drawback of low gain characteristics relatively resulted from additional feedback capacitance associated with the field plate electrode. The off-state breakdown voltage was significantly improved by employing source field plate electrode, and the highest of 203V was obtained. As compared to the conventional structures, the MESFETs with source field plate show an approximately 41% decrease in gate-to-drain capacitance, which is responsible for the 2.2dB gain improvement at 2GHz. Therefore, the 4H-SiC MESFETs with source field plate have superior DC and RF performances compared to the similar devices based on the conventional structure.

Keywords

Capacitance; Doping; Electric breakdown; Electrodes; Feedback; Laboratories; MESFETs; Semiconductor process modeling; Silicon carbide; Thermal conductivity; Gate-to-drain capacitance; SiC MESFET; Source field plate; gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289782

Filename

4289782