Emerging double-gate FinFETs technology

Author

Liu, Youngxun ; Masahara, Meishoku ; Ishii, Kenichi ; Suzuki, Eiichi

Author_Institution

Nanoelectronics Res. Inst., National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

100

Abstract

Emerging fin-type double-gate MOSFETs (FinFETs) including threshold voltage (V_th) controllable 4-terminal (4T) FinFETs fabricated by a orientation-dependent wet etching technique are presented. The excellent subthreshold characteristics in the fabricated FinFETs, the accurate current and transconductance multiplication in multi-fin devices and the flexible V_th controllability in the 4T-FinFETs were confirmed experimentally. The developed processes are practically useful for the fabrication of ultra-narrow Si-fin channels. The 4T-FinFETs with high V_th controllability are promising for future high-performance and flexible power managing ULSI circuits.

Keywords

MOSFET; ULSI; etching; ULSI circuits; double-gate FinFETs technology; fin-type double-gate MOSFET; multi-fin devices; orientation-dependent wet etching; subthreshold characteristics; threshold voltage; ultra-narrow Si-fin channels; Controllability; Energy management; Fabrication; FinFETs; MOSFETs; Threshold voltage; Transconductance; Ultra large scale integration; Voltage control; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434963

Filename

1434963