Emerging double-gate FinFETs technology

Emerging fin-type double-gate MOSFETs (FinFETs) including threshold voltage (V_th) controllable 4-terminal (4T) FinFETs fabricated by a orientation-dependent wet etching technique are presented. The excellent subthreshold characteristics in the fabricated FinFETs, the accurate current and transconductance multiplication in multi-fin devices and the flexible V_th controllability in the 4T-FinFETs were confirmed experimentally. The developed processes are practically useful for the fabrication of ultra-narrow Si-fin channels. The 4T-FinFETs with high V_th controllability are promising for future high-performance and flexible power managing ULSI circuits.