• DocumentCode
    3261704
  • Title

    The degradation of reading performance in SONOS Flash Memory with small threshold voltage window

  • Author

    Shi, Kai ; Xu, Ming-Zhen ; Tan, Chang-Hua

  • Author_Institution
    Department of Microelectronics, Peking University, Beijing, 100871, China
  • fYear
    2007
  • fDate
    3-4 June 2007
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    In this paper, the threshold current was presented as a referential current of the bit-line to characterize the degradation of reading performances in SONOS flash memory with small threshold voltage window. The threshold current did not need any additional measurements, its feasibility was validated by both experiments and calculations, and it was more sensitive to the degradation of reading performances than the threshold voltage. And the degradation of reading performances was related to the generated interface traps.
  • Keywords
    Charge measurement; Current measurement; Degradation; Flash memory; Monitoring; SONOS devices; Space vector pulse width modulation; Stress; Threshold current; Threshold voltage; Flash memory; SONOS; reading current; threshold current; threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
  • Conference_Location
    Tsinghua University
  • Print_ISBN
    1-4244-1098-3
  • Electronic_ISBN
    1-4244-1098-3
  • Type

    conf

  • DOI
    10.1109/EDST.2007.4289798
  • Filename
    4289798