DocumentCode
3261704
Title
The degradation of reading performance in SONOS Flash Memory with small threshold voltage window
Author
Shi, Kai ; Xu, Ming-Zhen ; Tan, Chang-Hua
Author_Institution
Department of Microelectronics, Peking University, Beijing, 100871, China
fYear
2007
fDate
3-4 June 2007
Firstpage
145
Lastpage
148
Abstract
In this paper, the threshold current was presented as a referential current of the bit-line to characterize the degradation of reading performances in SONOS flash memory with small threshold voltage window. The threshold current did not need any additional measurements, its feasibility was validated by both experiments and calculations, and it was more sensitive to the degradation of reading performances than the threshold voltage. And the degradation of reading performances was related to the generated interface traps.
Keywords
Charge measurement; Current measurement; Degradation; Flash memory; Monitoring; SONOS devices; Space vector pulse width modulation; Stress; Threshold current; Threshold voltage; Flash memory; SONOS; reading current; threshold current; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location
Tsinghua University
Print_ISBN
1-4244-1098-3
Electronic_ISBN
1-4244-1098-3
Type
conf
DOI
10.1109/EDST.2007.4289798
Filename
4289798
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