DocumentCode :
3261732
Title :
A Support Vector Regression Nonlinear Model for SiC MESFET
Author :
Guo, Yunchuan ; Xu, Yuehang ; Xu, Ruimin ; Yan, Bo
Author_Institution :
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. Email: ycguo@uestc.edu.cn
fYear :
2007
fDate :
3-4 June 2007
Firstpage :
153
Lastpage :
156
Abstract :
Support vector machine (SVM) regression approach is introduced in this paper for table-based nonlinear modeling of field effect transistors (FET). Support vector machine, which based on statistical learning theory and structural risk minimization (SRM) principle, is provided with good generalization ability. For the purpose of demonstration, a table-based SVM regression model is established using a set of training data and testing data produced by an available empirical nonlinear model of SiC MESFET. Experimental results are also given out to validate its good ability in predicting electrical performance.
Keywords :
Capacitance; FETs; MESFETs; Predictive models; Risk management; Silicon carbide; Statistical learning; Support vector machine classification; Support vector machines; Training data; Nonlinear model; SiC MESFET; support vector machine (SVM);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
Type :
conf
DOI :
10.1109/EDST.2007.4289800
Filename :
4289800
Link To Document :
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