Title :
High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation
Author :
Rino Choi ; Chang Seok Kang ; Byoung Hun Lee ; Onishi, K. ; Nieh, R. ; Gopalan, S. ; Dharmarajan, E. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A surface preparation technique using an NH/sub 3/ anneal has been investigated to reduce interface reaction and consequently the equivalent oxide thickness (EOT) of hafnium oxide for alternative gate dielectric applications. MOSCAPs and MOSFETs were fabricated on the NH/sub 3/ nitrided substrates with HfO/sub 2/ dielectric and TaN gate electrode. Using this nitridation technique, EOT of as thin as 7.1 /spl Aring/ with 10/sup -2/ A/cm/sup 2/ at -1.5 V was obtained. Furthermore, excellent device characteristics and reasonable reliability have been achieved.
Keywords :
MOS capacitors; MOSFET; annealing; dielectric thin films; electrodes; hafnium compounds; nitridation; permittivity; semiconductor device reliability; tantalum compounds; -1.5 V; 7.1 angstrom; HfO/sub 2/ dielectric; HfO/sub 2/-Si; MOSCAPs; MOSFETs; NH/sub 3/; NH/sub 3/ anneal; NH/sub 3/ nitrided substrates; TaN; TaN electrode; TaN gate electrode; device characteristics; equivalent oxide thickness; gate dielectric applications; hafnium oxide; interface reaction; nitridation surface preparation; nitridation technique; quality; reliability; surface preparation technique; ultra-thin HfO/sub 2/ gate dielectric MOSFETs; Annealing; Capacitance; Dielectric substrates; Electrodes; Hafnium oxide; Leakage current; MOSFETs; Nitrogen; Temperature; Thermal stability;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934924
