Title :
Ultra-thin body PMOSFETs with selectively deposited Ge source/drain
Author :
Yang-Kyu Choi ; Daewon Ha ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Ultra-thin body (UTB) MOSFETs with body thickness down to 4 nm and LPCVD selectively deposited Ge raised source and drain (S/D) are demonstrated for the first time. Devices with gate length down to 30 nm show excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge by the ultra-thin body are investigated.
Keywords :
MOSFET; carrier mobility; chemical vapour deposition; germanium; nanotechnology; semiconductor device testing; semiconductor growth; 30 nm; 4 nm; Ge; LPCVD; UTB MOSFETs; body thickness; gate length; inversion charge; mobility enhancement; quantum confinement; selectively deposited Ge raised source/drain; selectively deposited Ge source/drain; short-channel behavior; threshold-voltage shift; ultra-thin body PMOSFETs; CMOS process; Etching; Germanium; High K dielectric materials; High-K gate dielectrics; MOSFETs; Potential well; Tail; Threshold voltage; Tin;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934926
