Title :
High-performance 157 nm resist based on fluorine-containing polymer
Author :
Kishimura, S. ; Endo, M. ; Sasago, M.
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
Abstract :
A new high-performance resist for F/sub 2/ laser (157 nm) VUV (vacuum ultraviolet) lithography has been developed. The resist polymers consist of fluorinated-alicyclic methacrylate (MA), fluorinated-alkyl MA, acid labile unit, etch-resistant unit and adhesive unit. These polymers can be easily synthesized at low cost. A resist based on this polymer has over 40% transmittance per 100 nm thickness and the same etch-resistance as adamanthyl MA type-ArF resists. Fine images with vertical profiles of 200 nm thickness are obtained by contact exposure with the F/sub 2/ laser. Simulations showed that the resolution of this resist with a F/sub 2/ laser stepper (NA 0.85) has 70 nm L/S and 40 nm isolated line pattern capability at 200 nm thickness. Based on the developed 157 nm resist, 157 nm VUV lithography can be accepted as a 70 nm node.
Keywords :
etching; image resolution; laser materials processing; photoresists; polymer films; semiconductor process modelling; ultraviolet lithography; 100 nm; 157 nm; 200 nm; 40 nm; 70 nm; ArF; F/sub 2/; F/sub 2/ laser stepper; F/sub 2/ laser vacuum UV lithography; VUV lithography; acid labile unit; adamanthyl MA type-ArF resists; adhesive unit; contact exposure; etch-resistance; etch-resistant unit; fine images; fluorinated-alicyclic methacrylate; fluorinated-alkyl MA; fluorine-containing polymer; isolated line pattern capability; line-and-space pattern capability; polymer synthesis cost; resist; resist performance; resist polymers; resist resolution; resist transmittance; simulation; vacuum ultraviolet lithography; vertical image profiles; Acceleration; Atomic beams; Costs; Etching; Isolation technology; Lithography; Polymers; Resists; Semiconductor lasers; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934935
