Title :
Metal gate work function adjustment for future CMOS technology
Author :
Qiang Lu ; Lin, R. ; Ranade, P. ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
CMOS transistors were fabricated using a single metal, [110]-Mo, as the gate material. [110]-Mo shows a high work function value that is suitable for PMOSFETs, and, with nitrogen implantation, its work function can be reduced to meet the requirements of NMOSFETs. The change in Mo work function can be controlled by the nitrogen implant parameters, which is potentially useful for multiple-V/sub T/ technology. TEM and EDS analysis show that Mo gate electrodes are stable after undergoing a conventional CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; X-ray chemical analysis; electrodes; integrated circuit interconnections; integrated circuit metallisation; ion implantation; molybdenum; transmission electron microscopy; work function; CMOS process; CMOS technology; CMOS transistors; EDS analysis; Mo gate electrode stability; Mo work function; Mo-SiO/sub 2/-Si; Mo:N; NMOSFETs; PMOSFETs; TEM; metal gate work function adjustment; multiple-threshold voltage technology; nitrogen implant parameters; nitrogen implantation; single metal [110]-Mo gate material; work function; Annealing; CMOS process; CMOS technology; Dielectric materials; Etching; Implants; Inorganic materials; Lithography; MOSFET circuits; Nitrogen;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934939
