Title :
Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices
Author :
You-Seok Suh ; Heuss, G. ; Huicai Zhong ; Shin-Nam Hong ; Misra, V.
Author_Institution :
Dept. of Electr. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this work, the physical and electrical properties of TaSi/sub x/N/sub y/ films are evaluated for gate electrode applications. MOS capacitors with TaSi/sub x/N/sub y/ gates of varying N concentrations were fabricated. The stability of TaSi/sub x/N/sub y//SiO/sub 2//p-type Si stacks was studied at annealing temperatures of 700/spl deg/C, 900/spl deg/C, and 1000/spl deg/C in Ar. When the nitrogen content exceeds 35 at%, excellent stability of oxide thickness and gate current is observed for anneals up to 1000/spl deg/C. The results also indicate that the work function of TaSi/sub x/N/sub y/ is compatible with NMOS devices.
Keywords :
CMOS integrated circuits; MOS capacitors; annealing; electrodes; integrated circuit interconnections; integrated circuit testing; silicon compounds; tantalum compounds; thermal stability; work function; 1000 C; 700 C; 900 C; Ar; Ar annealing temperatures; MOS capacitors; N concentration; NMOS devices; Si; TaSi/sub x/N/sub y/ films; TaSi/sub x/N/sub y/ gate electrodes; TaSi/sub x/N/sub y/ gates; TaSi/sub x/N/sub y//SiO/sub 2//p-type Si stacks; TaSiN-SiO/sub 2/-Si; dual gate Si-CMOS devices; electrical characteristics; electrical properties; gate current; gate electrode applications; nitrogen content; oxide thickness; physical properties; stability; work function; Annealing; Argon; Channel bank filters; Dielectrics; Electric variables; Electrodes; MOS capacitors; MOS devices; Temperature; Thermal stability;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934940
