Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects

We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), also called the high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJT has a 1.65/spl times/ higher drive current (V/sub DS/=-1.6 V and V/sub G/-V/sub T/=-2 V), and a 70/spl times/ lower off-state leakage (V/sub DS/=-1.6 V).