Title :
Novel damage-free direct metal gate process using atomic layer deposition
Author :
Dae-Gyu Park ; Kwan-Yong Lim ; Heung-Jae Cho ; Tae-Ho Cha ; Joong-Jung Kim ; Jung-Kyu Ko ; Ins-Seok Yeo ; Jin Won Park
Author_Institution :
Memory R&D Div., Hyundai Electron. Ind. Co. Ltd., Ichon, South Korea
Abstract :
We report the impact of atomic layer deposition (ALD)-TiN on the novel characteristics of the W/TiN/SiO/sub 2//p-Si MOS system. A damage-free direct metal gate was attained using ALD-TiN as manifested by the negligible hysteresis and low interface trap density (D/sub it/) of /spl sim/5/spl times/10/sup 10/ eV/sup -1/cm/sup -2/ near the Si midgap. Gate leakage current level gated with ALD-TiN is remarkably lower than that with physical vapor deposition (PVD)-TiN or poly-Si gate at a similar capacitance equivalent thickness (CET). In addition, ALD-TiN demonstrated highly robust gate oxide reliability with negligible CET variation against high thermal budget, paving the way for the direct metal gate process.
Keywords :
MIS structures; MOS capacitors; capacitance; electron traps; hole traps; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; interface states; leakage currents; titanium compounds; tungsten; vacuum deposition; ALD-TiN; CET variation; PVD-TiN gate; Si; Si midgap; W-TiN-SiO/sub 2/-Si; W/TiN/SiO/sub 2//p-Si MOS system; atomic layer deposition; atomic layer deposition TiN; capacitance equivalent thickness; damage-free direct metal gate; damage-free direct metal gate process; direct metal gate process; gate leakage current; hysteresis; interface trap density; poly-Si gate; robust gate oxide reliability; thermal budget; Annealing; Atherosclerosis; Atomic layer deposition; Capacitance-voltage characteristics; Chemical vapor deposition; Hysteresis; Leakage current; MOS capacitors; MOS devices; Tin;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934949
