Title :
Radical nitridation in multi-oxide process for 100 nm generation CMOS technology
Author :
Yasuda, Y. ; Kimizuka, N. ; Watanabe, K. ; Tatsumi, T. ; Ono, A. ; Fukasaku, K. ; Imai, K. ; Nakamura, N.
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Sagamihara, Japan
Abstract :
We propose a new multi-oxide technology, which drastically improves the ratio of the drive current to the gate leakage current for both high-performance (HP) transistors and low-power (LP) transistors on the same die. The key technology is radical nitridation (Watanabe et al, Appl. Phys. Lett. vol. 76, p. 2940, 2000; Togo et al, VLSI Tech. Symp., p. 116, 2000) followed by multi-oxide formation. In addition, it is easier to integrate with conventional CMOS processes compared with high-k dielectrics. Only one additional step reduces equivalent oxide thickness (EOT) of the LP transistor by 0.3 nm, thereby improving the drive current (I/sub on/). It also suppresses the gate leakage current (I/sub g/) for HP transistors by two orders of magnitude without an increase of EOT. Each oxide thickness of the multi-oxide is scalable to support various system-on-a-chip (SoC) applications.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; leakage currents; low-power electronics; nitridation; oxidation; CMOS process integration; CMOS technology; EOT; HP transistors; SiO/sub 2/-Si; SiON; SoC applications; drive current; equivalent oxide thickness; gate leakage current; high-k dielectrics; high-performance transistors; low-power transistors; multi-oxide formation; multi-oxide process; multi-oxide technology; radical nitridation; scalable oxide thickness; system-on-a-chip applications; CMOS process; CMOS technology; Dielectric constant; High-K gate dielectrics; Leakage current; MOSFETs; National electric code; Nitrogen; Silicon; System-on-a-chip;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934958
