Title :
A study of analog characteristics of CMOS with heavily nitrided NO oxynitrides
Author :
Ohguro, T. ; Nagano, T. ; Fujiwara, M. ; Takayanagi, M. ; Shimizu, T. ; Momose, H.S. ; Nakamura, S. ; Toyoshima, Y.
Author_Institution :
Syst. LSI R&D Center, Toshiba Corp., Kanagawa, Japan
Abstract :
Recently, heavily nitrided NO oxynitride has been proposed as an alternative to pure oxide in order to realize high drivability and suppress a large gate leakage current (Fujiwara et al, Digest of IEDM 2000, pp. 227-30, 2000). However, in general, oxynitride has higher interface state density than that of pure oxide, and brings low frequency noise (or 1/f noise) degradation (Kimijima et al., 1999). Thus, analog characteristics under such aggressive doping conditions should be observed carefully for realization of high performance mixed analog and digital LSIs. In this paper, we report analysis of the 1/f noise degradation due to heavily nitrided NO oxynitrides and predict the interface state density value to satisfy 1999 ITRS Roadmap requirements. Additionally, a buried channel type MOSFET is proposed for suppression of the 1/f noise and f/sub T/ degradation.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; buried layers; doping profiles; integrated circuit noise; large scale integration; mixed analogue-digital integrated circuits; nitridation; nitrogen compounds; silicon compounds; 1/f noise; 1/f noise degradation; 1/f noise suppression; CMOS; analog characteristics; buried channel type MOSFET; doping conditions; drivability; gate leakage current suppression; heavily nitrided NO oxynitrides; interface state density; low frequency noise degradation; mixed analog/digital LSIs; pure oxide; Counting circuits; Degradation; Interface states; Low-frequency noise; MOS devices; MOSFET circuits; Nitrogen; Noise measurement; Semiconductor device noise; Substrates;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934964
