A new quantitative hydrogen-based model for ultra-thin oxide breakdown

Author

Sune, J. ; Wu, E.

Author_Institution

Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Spain

fYear

2001

fDate

12-14 June 2001

Firstpage

97

Lastpage

98

Abstract

A new quantitative hydrogen-based model for the degradation and breakdown of ultra-thin SiO/sub 2/ gate oxides is presented. The model is based on the quantum mechanical description of chemical reactions which involve protons and oxygen vacancies both at the Si-SiO/sub 2/ interface (suboxide bonds) and in the oxide bulk. Comparison with experiments shows that the values of the model parameters are compatible with recent first-principles calculations.

Keywords

MOS capacitors; MOSFET; dielectric thin films; hydrogen; integrated circuit reliability; integrated circuit testing; interface structure; protons; semiconductor device breakdown; semiconductor device models; silicon compounds; vacancies (crystal); H; MOS capacitors; NMOSFET; Si-SiO/sub 2/ interface; SiO/sub 2/-Si; chemical reactions; first-principles calculations; model parameters; oxide bulk; oxygen vacancies; protons; quantitative hydrogen-based model; quantum mechanical description; suboxide bonds; ultra-thin SiO/sub 2/ gate oxide breakdown; ultra-thin SiO/sub 2/ gate oxide degradation; ultra-thin SiO/sub 2/ gate oxides; ultra-thin oxide breakdown; Anodes; Chemicals; Degradation; Electric breakdown; Electrons; Hydrogen; Microscopy; Protons; Quantum mechanics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934967

Filename

934967