Title :
A new quantitative hydrogen-based model for ultra-thin oxide breakdown
Author :
Sune, J. ; Wu, E.
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Spain
Abstract :
A new quantitative hydrogen-based model for the degradation and breakdown of ultra-thin SiO/sub 2/ gate oxides is presented. The model is based on the quantum mechanical description of chemical reactions which involve protons and oxygen vacancies both at the Si-SiO/sub 2/ interface (suboxide bonds) and in the oxide bulk. Comparison with experiments shows that the values of the model parameters are compatible with recent first-principles calculations.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; hydrogen; integrated circuit reliability; integrated circuit testing; interface structure; protons; semiconductor device breakdown; semiconductor device models; silicon compounds; vacancies (crystal); H; MOS capacitors; NMOSFET; Si-SiO/sub 2/ interface; SiO/sub 2/-Si; chemical reactions; first-principles calculations; model parameters; oxide bulk; oxygen vacancies; protons; quantitative hydrogen-based model; quantum mechanical description; suboxide bonds; ultra-thin SiO/sub 2/ gate oxide breakdown; ultra-thin SiO/sub 2/ gate oxide degradation; ultra-thin SiO/sub 2/ gate oxides; ultra-thin oxide breakdown; Anodes; Chemicals; Degradation; Electric breakdown; Electrons; Hydrogen; Microscopy; Protons; Quantum mechanics; Tunneling;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934967
