Title :
Gate voltage dependent model for TDDB lifetime prediction under direct tunneling regime
Author :
Takayanagi, M. ; Takagi, S. ; Toyoshima, Y.
Author_Institution :
Semicond. Co., Toshiba Corp., Japan
Abstract :
Systematic experiments are carried out in this paper for quantitative understanding of gate voltage scaling for TDDB under the direct tunneling regime. It is found that the slope of ln T/sub BD/ has a nonlinear relationship to V/sub ox/. A simple model to explain the experimental voltage acceleration factor is proposed based on the anode hole injection (AHI) concept. It is shown, according to model prediction, that the 1.8 nm gate oxide is still reliable under real operational voltage conditions.
Keywords :
MOS capacitors; MOSFET; charge injection; dielectric thin films; integrated circuit reliability; integrated circuit testing; semiconductor device breakdown; semiconductor device models; tunnelling; 1.8 nm; MOS capacitors; MOSFET; SiO/sub 2/-Si; TDDB; TDDB lifetime prediction; anode hole injection concept; direct tunneling regime; gate oxide reliability; gate voltage dependent model; gate voltage scaling; model; nonlinear relationship; operational voltage conditions; voltage acceleration factor; Acceleration; Anodes; Hot carriers; Large scale integration; MOSFETs; Power system modeling; Predictive models; Stress; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934968
