New considerations for highly reliable PMOSFETs in 100 nm generation and beyond

Author

Morifuji, E. ; Kumamori, T. ; Muta, M. ; Suzuki, K. ; De, I. ; Shibkov, A. ; Saxena, S. ; Enda, T. ; Aoki, N. ; Asano, W. ; Otani, H. ; Nishigori, M. ; Miyamoto, K. ; Matsuoka, F. ; Noguchi, T. ; Kakumu, M.

Author_Institution

Syst. LSI Div., Toshiba Corp., Yokohama, Japan

fYear

2001

fDate

12-14 June 2001

Firstpage

117

Lastpage

118

Abstract

The hot-carrier (HC) instability for surface channel PMOSFETs is investigated intensively. We found from experimental data that hot-carrier injection occurs at the channel center under the most serious stress condition of V/sub gs/=V/sub ds/ and that a physical mechanism similar to NBTI is responsible for degradation at room temperature, and confirmed from hydrodynamic simulations. We demonstrate that mechanical stress resulting from the sidewall spacer accelerates this anomalous degradation in short-channel PMOS under hot-carrier stress. We show that management of this degradation mechanism is indispensable for achieving high reliability in future generation PMOS devices.

Keywords

MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; NBTI-like physical mechanism; PMOS devices; channel center; degradation mechanism; device degradation; hot-carrier injection; hot-carrier instability; hot-carrier stress; hydrodynamic simulations; mechanical stress; reliability; reliable PMOSFETs; short-channel PMOS; sidewall spacer; surface channel PMOSFETs; voltage stress condition; Acceleration; Degradation; Hot carrier injection; Hot carriers; Hydrodynamics; MOSFETs; Niobium compounds; Stress; Temperature; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934977

Filename

934977