Title :
Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 /spl mu/m DRAM cell and beyond
Author :
Kim Ilgweon ; Kwon Jaesoon ; Lee Kyosung ; Kim Dongchan ; Shin Jungho ; Choy Junho ; Kim Namsung ; Yang Heesik ; Cheon Youngil ; Park Juseok ; Kwon Woyup ; Song Youngjin ; Park Daeyoung ; Kim Jibum
Author_Institution :
Memory R&D Div., Hyundai Electron. Co. Ltd., Chungbuk, South Korea
Abstract :
The denudation scheme based on vacancy-assisted BMD (bulk micro defect) formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI (shallow trench isolation). In this paper, we report the denudation scheme employing low-cost FPFC (fast-pull and fast-cool) ingot growth, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.
Keywords :
DRAM chips; annealing; cooling; getters; isolation technology; semiconductor growth; semiconductor process modelling; vacancies (crystal); 0.18 micron; DRAM cell; DRAM retention time; FPFC ingot growth; STI; STI-stress reduction; denudation scheme; denudation thermal budget; fast-pull/fast-cool ingot growth; gettering; grown-in defect reduction; high density DRAM; retention time; shallow trench isolation; thermal budget; vacancy-assisted bulk micro defect formation; Annealing; Cooling; Costs; Gettering; Hydrogen; Oxidation; Random access memory; Research and development; Silicon; Stress;
Conference_Titel :
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-012-7
DOI :
10.1109/VLSIT.2001.934981
