Title :
A generic numerical model on heterodyne terahertz detection in field effect transistor
Author :
Yan, Zhifeng ; Zhu, Jingxuan ; Lin, Xinnan ; He, Frank ; Wang, Guozeng ; Yang, Zhang ; Cao, Juncheng
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
The heterodyne detection characteristics of field effect transistors are studied in this paper. Based on the hydrodynamic equations which govern the terahertz signal transport in field effect MOS transistors, a numerical simulation program is developed. This program works well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. The work demonstrates the potential to use MOS transistors for THz detectors and the method to optimize the device structure. Simulation results agree well with the existing theory in the nonresonant situations.
Keywords :
MOSFET; semiconductor device models; submillimetre wave transistors; terahertz wave detectors; FET; THz detectors; device structure; field effect MOS transistors; field effect transistor; generic numerical model; heterodyne terahertz detection; numerical simulation program; terahertz signal transport; Detectors; Logic gates; MOSFETs; Mathematical model; Numerical models; Plasma waves; Terahertz signal; field effect MOS transistor; heterodyne detection; numerical simulation;
Conference_Titel :
Image and Signal Processing (CISP), 2010 3rd International Congress on
Conference_Location :
Yantai
Print_ISBN :
978-1-4244-6513-2
DOI :
10.1109/CISP.2010.5647135
