DocumentCode
3263185
Title
Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers
Author
Jia, Shuo ; Tsui, Kenneth K P ; Liao, Xiaoping ; Chen, Kevin J.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
345
Abstract
In this paper, we propose a low cost step-gate-oxide (SGO) MOSFET that is suitable for RF power amplifiers. Both simulation and experiment results approve the reduced parasitic capacitance, higher cutoff frequency and improved breakdown voltage. With optimized structure, we achieve 20% reduction of the feedback capacitance; increased breakdown voltage by 8% with higher cutoff frequency, which will allow more power to be obtained at higher frequency. Devices are fabricated on SOI wafers to verify the simulation result.
Keywords
microwave power amplifiers; power MOSFET; RF power amplifiers; SOI wafers; breakdown voltage; cutoff frequency; feedback capacitance; parasitic capacitance; step-gate-oxide MOSFET; Cutoff frequency; Feedback; MOSFET circuits; Medical simulation; Parasitic capacitance; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435023
Filename
1435023
Link To Document