A novel double RESURF LDMOS with multiple rings in non-uniform drift region

Author

Wu, Jie ; Fang, Jian ; Zhang, Bo ; Li, Zhaoji

Author_Institution

IC Design Center, UESTC, Chengdu, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

349

Abstract

A novel double RESURF LDMOS with multiple rings in non-uniform drift region is developed and successfully fabricated with a breakdown voltage of 600V. This double RESURF power device is monolithically integrated with low voltage Bi-CMOS control circuit. Double RESURF is a very complicated process of accurate charge control, and requires a well-designed device layout with complete charge balance among all the critical layers. The proposed device maximizes the benefits of the double RESURF technique by optimizing key process and device geometrical parameters in order to achieve the lowest on-resistance possible with the desired breakdown voltage.

Keywords

BiCMOS integrated circuits; low-power electronics; power MOSFET; 600 V; RESURF power device; breakdown voltage; double RESURF LDMOS; low voltage Bi-CMOS control circuit; nonuniform drift region; Doping; Electric breakdown; Electrodes; Impurities; Integrated circuit interconnections; Low voltage; MOSFET circuits; Power integrated circuits; Silicon; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435024

Filename

1435024