An analytical breakdown model of high voltage SOI device considering the modulation of step buried-oxide interface charges

Author

Guo, Yufeng ; Li, Zhaoji ; Zhang, Bo ; Fang, Jian

Author_Institution

IC Design Center, China Univ. of Electron. Sci. & Technol., Chengdu, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

357

Abstract

Base on solving 2D Poisson equation, an analytical breakdown model of high voltage SOI device with step buried-oxide interface charges (SBIC) is proposed. A new universal RESURF condition of SOI high voltage device with/without the buried-oxide interface charges is derived at the divided region number n from 0 to ∞. By the model, the breakdown characteristics of the new device are discussed for different structure parameters. It is shown that: In the vertical, the electric field of buried oxide layer approaches to the critic value of SiO₂ 600V/μm based on the continuity of electric displacement. In the lateral, a uniform profile of the surface electric field is obtained due to the modulation of SBIC. As a result, a very high breakdown voltage is exhibited. The comparisons of analytical results with numerical simulations by MEDICI have been shown a fair agreement.

Keywords

Poisson equation; buried layers; electric breakdown; interface states; semiconductor device models; silicon-on-insulator; 2D Poisson equation; RESURF condition; SiO₂; breakdown model; breakdown voltage; buried-oxide interface charges; high voltage SOI device; surface electric field; Analytical models; Boundary conditions; Breakdown voltage; Dielectric constant; Dielectric devices; Dielectric substrates; Electric breakdown; Numerical simulation; Poisson equations; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435026

Filename

1435026