DocumentCode :
3263398
Title :
Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding
Author :
Choquette, Kent D. ; Roberds, B. ; Geib, K.M. ; Hou, H.Q. ; Twesten, R.D. ; Lear, K.L. ; Hammons, B.E.
Author_Institution :
Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
34
Abstract :
We report on bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSELs) that are wafer bonded to AlGaAs substrates. We employ a simple low temperature wafer bonding process that uses inert N2 gas during the bonding anneal rather than H2
Keywords :
annealing; gallium arsenide; laser cavity resonators; laser transitions; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; wafer bonding; 850 nm; AlGaAs; AlGaAs substrates; GaAs; N2; bonding anneal; bottom-emitting 850 nm selectively oxidized VCSELs; inert N2 gas; simple low temperature wafer bonding process; vertical cavity surface emitting lasers; wafer bonding; Annealing; Etching; Gallium arsenide; Hydrogen; Mirrors; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645222
Filename :
645222
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3263398
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