DocumentCode :
3263756
Title :
Extraction Of Locos Edge Defect Information In SOI/MOSFETs
Author :
Yujun Li ; Ma, T.P.
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
123
Lastpage :
127
Keywords :
Charge pumps; Data mining; Doping; Isolation technology; MOSFET circuits; Microelectronics; Monitoring; Semiconductor films; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614742
Filename :
614742
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3263756
