DocumentCode :
3263958
Title :
High Performance Gate-all-around TFT(GAT) For High-density, Low-voltage-operation, And Low-power Srams
Author :
Miyamoto, S. ; Maegawa, S. ; Maeda, S. ; Ipposhi, T. ; Kuriyama, H. ; Nishimura, T.
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
128
Lastpage :
132
Keywords :
Electric variables; Energy consumption; Fabrication; Grain boundaries; Laboratories; Low voltage; Performance analysis; Thin film transistors; Threshold voltage; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614743
Filename :
614743
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3263958
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