Strain relaxation and defect creation in high-power laser diode arrays

Author

Jaeger, A. ; Tomm, J.W. ; Bärwolff, A.

Author_Institution

Max-Born Inst. fur Nichtlineare und Opt. und Kurzzeitspektroskopie, Berlin, Germany

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

76

Abstract

High-Power Laser Diode Arrays (LDA) are of increasing interest as pump sources for solid-state lasers or for printing. For increasing reliability and lifetime of LDAs detailed knowledge about the microscopic effects accompanied with gradual aging under operating conditions is required. It will be demonstrated that in lateral direction spatially resolved electroluminescence (EL) and photocurrent (PC) spectroscopy can be used as sensitive tools for analysing strain and creation of defects in the active region of the device

Keywords

ageing; electroluminescence; laser reliability; photoconductivity; semiconductor laser arrays; aging; defect creation; electroluminescence spectroscopy; high-power laser diode array; lifetime; photocurrent spectroscopy; reliability; strain relaxation; Aging; Capacitive sensors; Diode lasers; Laser excitation; Linear discriminant analysis; Microscopy; Optical arrays; Printing; Semiconductor laser arrays; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645259

Filename

645259