DocumentCode :
3264119
Title :
Strain relaxation and defect creation in high-power laser diode arrays
Author :
Jaeger, A. ; Tomm, J.W. ; Bärwolff, A.
Author_Institution :
Max-Born Inst. fur Nichtlineare und Opt. und Kurzzeitspektroskopie, Berlin, Germany
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
76
Abstract :
High-Power Laser Diode Arrays (LDA) are of increasing interest as pump sources for solid-state lasers or for printing. For increasing reliability and lifetime of LDAs detailed knowledge about the microscopic effects accompanied with gradual aging under operating conditions is required. It will be demonstrated that in lateral direction spatially resolved electroluminescence (EL) and photocurrent (PC) spectroscopy can be used as sensitive tools for analysing strain and creation of defects in the active region of the device
Keywords :
ageing; electroluminescence; laser reliability; photoconductivity; semiconductor laser arrays; aging; defect creation; electroluminescence spectroscopy; high-power laser diode array; lifetime; photocurrent spectroscopy; reliability; strain relaxation; Aging; Capacitive sensors; Diode lasers; Laser excitation; Linear discriminant analysis; Microscopy; Optical arrays; Printing; Semiconductor laser arrays; Solid lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645259
Filename :
645259
Link To Document :
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