Title :
Strain and strain relief in highly doped silicon
Author_Institution :
Endevco Corp., Sunnyvale, CA, USA
Abstract :
A structure is devised to measure tensile strains in etch-released films. Tensile strain values found for a family of boron-doped, etch-released films are presented. A means is described for reducing the force resulting from the strain in a fiber.<>
Keywords :
bosons; electric sensing devices; elemental semiconductors; etching; heavily doped semiconductors; internal stresses; micromechanical devices; semiconductor doping; silicon; strain measurement; Si:B; accelerometer; doping strain; etch-released films; spokes; strain meter; strain relief; tensile strains; Boron; Capacitive sensors; Doping; Etching; Lattices; Needles; Silicon; Strips; Tensile strain; Turning;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
DOI :
10.1109/SOLSEN.1992.228272
