• DocumentCode
    3264158
  • Title

    Strain and strain relief in highly doped silicon

  • Author

    Wilner, L.B.

  • Author_Institution
    Endevco Corp., Sunnyvale, CA, USA
  • fYear
    1992
  • fDate
    22-25 June 1992
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    A structure is devised to measure tensile strains in etch-released films. Tensile strain values found for a family of boron-doped, etch-released films are presented. A means is described for reducing the force resulting from the strain in a fiber.<>
  • Keywords
    bosons; electric sensing devices; elemental semiconductors; etching; heavily doped semiconductors; internal stresses; micromechanical devices; semiconductor doping; silicon; strain measurement; Si:B; accelerometer; doping strain; etch-released films; spokes; strain meter; strain relief; tensile strains; Boron; Capacitive sensors; Doping; Etching; Lattices; Needles; Silicon; Strips; Tensile strain; Turning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
  • Conference_Location
    Hilton Head Island, SC, USA
  • Print_ISBN
    0-7803-0456-X
  • Type

    conf

  • DOI
    10.1109/SOLSEN.1992.228272
  • Filename
    228272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3264158