Title :
Temperature coefficient of resistance of piezoresistors
Author :
Sridhar, U. ; Foster, R.
Author_Institution :
Honeywell Inc., Micro Switch Div., Richardson, TX, USA
Abstract :
A simple method to accurately model the temperature coefficient of resistance (TCR) of ion-implanted piezoresistors in silicon is presented. The model takes into account effects of piezoresistor compensation up to an impurity concentration of 10/sup 20/ atoms/cm/sup 2/.<>
Keywords :
bosons; carrier mobility; digital simulation; doping profiles; elemental semiconductors; piezoelectric devices; resistors; semiconductor technology; silicon; ICR; SUPREM III simulation; Si:B; compensation; impurity concentration; ion implanted resistor; mobility; model; piezoresistors; semiconductor device; temperature coefficient of resistance; Boron; Electric resistance; Impurities; Piezoresistive devices; Resistors; Semiconductor device modeling; Silicon; Stability; Switches; Temperature sensors;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
DOI :
10.1109/SOLSEN.1992.228277
