DocumentCode :
3264335
Title :
A vertical Hall magnetic field sensor using CMOS-compatible micromachining techniques
Author :
Paranjape, M. ; Ristic, Lj. ; Allegretto, W.
Author_Institution :
Alberta Univ., Edmonton, Alta., Canada
fYear :
1992
fDate :
22-25 June 1992
Firstpage :
32
Lastpage :
34
Abstract :
A novel magnetic field sensor for two-dimensional detection of magnetic fields has been simulated, designed, manufactured, and tested. The device is made as a vertical Hall structure comprised of two pairs of current contacts for the detection of two orthogonal components of magnetic field. The uniqueness of this sensor is that it employs a bulk micromachining technique as a post processing step to accomplish the confinement of electron flow in the desired directions. The experimental results and simulations are in good agreement. The combination of bulk micromachining and CMOS processing has led to favourable results for the sensor.<>
Keywords :
CMOS integrated circuits; Hall effect transducers; detectors; integrated circuit technology; magnetic field measurement; 2D detection; CMOS processing; bulk micromachining; current contacts; orthogonal components; simulations; vertical Hall magnetic field sensor; CMOS process; Electrons; Fabrication; Magnetic confinement; Magnetic fields; Magnetic sensors; Mathematics; Microelectronics; Micromachining; Sensor phenomena and characterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
Type :
conf
DOI :
10.1109/SOLSEN.1992.228282
Filename :
228282
Link To Document :
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