A vertical Hall magnetic field sensor using CMOS-compatible micromachining techniques

Author

Paranjape, M. ; Ristic, Lj. ; Allegretto, W.

Author_Institution

Alberta Univ., Edmonton, Alta., Canada

fYear

1992

fDate

22-25 June 1992

Firstpage

32

Lastpage

34

Abstract

A novel magnetic field sensor for two-dimensional detection of magnetic fields has been simulated, designed, manufactured, and tested. The device is made as a vertical Hall structure comprised of two pairs of current contacts for the detection of two orthogonal components of magnetic field. The uniqueness of this sensor is that it employs a bulk micromachining technique as a post processing step to accomplish the confinement of electron flow in the desired directions. The experimental results and simulations are in good agreement. The combination of bulk micromachining and CMOS processing has led to favourable results for the sensor.<>

Keywords

CMOS integrated circuits; Hall effect transducers; detectors; integrated circuit technology; magnetic field measurement; 2D detection; CMOS processing; bulk micromachining; current contacts; orthogonal components; simulations; vertical Hall magnetic field sensor; CMOS process; Electrons; Fabrication; Magnetic confinement; Magnetic fields; Magnetic sensors; Mathematics; Microelectronics; Micromachining; Sensor phenomena and characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Print_ISBN

0-7803-0456-X

Type

conf

DOI

10.1109/SOLSEN.1992.228282

Filename

228282