DocumentCode :
3264387
Title :
Design Rule Related Defects Formation
Author :
Hsieh, Y.F. ; Tsui, B.Y.
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
138
Lastpage :
141
Keywords :
Amorphous materials; CMOS technology; Crystalline materials; Density measurement; Electronics industry; Implants; Industrial electronics; Ion implantation; Leakage current; Microelectronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614745
Filename :
614745
Link To Document :
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