• DocumentCode
    3264511
  • Title

    The effect of release-etch processing on surface microstructure stiction

  • Author

    Alley, R.L. ; Cuan, G.J. ; Howe, R.T. ; Komvopoulos, K.

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • fYear
    1992
  • fDate
    22-25 June 1992
  • Firstpage
    202
  • Lastpage
    207
  • Abstract
    A passive polysilicon microstructure is described which has been used to evaluate the stiction or unwanted adhesion occurring after release etch, rinse and dry processing. The results are interpreted in terms of particle adhesion theory. A residue dissolved in the water and redeposited during drying is responsible for one form of adhesion, by solid bridging. A reaction at silicon surfaces immersed in water is suggested as the source of this residue. Formation of a chemical oxide layer to protect the silicon surfaces alleviates adhesion due to this mechanism. Use of a hydrophobic, low surface energy coating that is applied as part of the rinse process is also described.<>
  • Keywords
    adhesion; elemental semiconductors; etching; protective coatings; semiconductor technology; silicon; surface topography; Si; chemical oxide layer; dry processing; hydrophobic coating; particle adhesion theory; passivation; passive polysilicon microstructure; release-etch processing; residue; rinse; semiconductor technology; solid bridging; surface microstructure stiction; Actuators; Adhesives; Chemicals; Dry etching; Hafnium; Microstructure; Rough surfaces; Silicon; Surface roughness; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
  • Conference_Location
    Hilton Head Island, SC, USA
  • Print_ISBN
    0-7803-0456-X
  • Type

    conf

  • DOI
    10.1109/SOLSEN.1992.228292
  • Filename
    228292