DocumentCode :
3264645
Title :
Behavior and application of silicon diaphragms with a boss and corrugations
Author :
Xiaoyi Ding
Author_Institution :
Monolithic Sensors Inc., Rolling Meadows, IL, USA
fYear :
1992
fDate :
22-25 June 1992
Firstpage :
166
Lastpage :
169
Abstract :
Non-planar diaphragms fabricated using the boron doped p/sup +/ etch stop technique may be deformed due to internal tensile stresses. Experiments and finite element analyses were carried out to study the effects of internal stresses on diaphragm behavior. The experimental and modeling results are consistent. Separate thermal processes performed before and after the diaphragm etch were developed to control the diaphragm deformation. By using the diaphragms with a boss and corrugations, capacitive pressure sensors with excellent linearity and large capacitance changes were fabricated for a variety of pressure ranges.<>
Keywords :
deformation; diaphragms; electric sensing devices; elemental semiconductors; etching; finite element analysis; internal stresses; micromechanical devices; pressure sensors; semiconductor technology; silicon; Si:B; boss; capacitive pressure sensors; corrugations; deformation; etch stop technique; finite element analyses; internal stresses; internal tensile stresses; linearity; thermal processes; Boron; Capacitive sensors; Corrugated surfaces; Etching; Finite element methods; Internal stresses; Process control; Scanning electron microscopy; Silicon; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
Type :
conf
DOI :
10.1109/SOLSEN.1992.228300
Filename :
228300
Link To Document :
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