Title :
Polysilicon resonant microbeam technology for high performance sensor applications
Author :
Guckel, H. ; Rypstat, C. ; Nesnidal, M. ; Zook, J.D. ; Burns, D.W. ; Arch, D.K.
Author_Institution :
Center for Appl. Microelectron., Wisconsin Univ., Madison, WI, USA
Abstract :
Advances have been made in the fabrication and testing of polysilicon resonant microbeams for application to high performance pressure sensors and accelerometers. Fabrication efforts have centered on three issues: interface integrity, sealing with repeatable vacuum levels and polysilicon piezoresistor performance. The interface issue requires an elimination of residues which can weaken the adhesion of polysilicon to silicon and polysilicon to processed polysilicon. An improved seal and pump technique is based on polysilicon sealing and hydrogen permeation. The sensitivity of the U-shaped piezoresistors used as beam deflection sensors can be compromised by lateral impurity diffusions. These problems can be eliminated by geometric design and heat cycle allocation. Testing of polysilicon resonant microbeams has been conducted to determine their characteristics from -60 to +180 degrees C. The results verify the applicability of resonant microbeams to high performance sensor applications.<>
Keywords :
electric sensing devices; elemental semiconductors; integrated circuit technology; micromechanical devices; seals (stoppers); semiconductor device testing; semiconductor technology; silicon; -60 to 180 degC; U-shaped piezoresistors; accelerometers; beam deflection sensors; interface integrity; lateral impurity diffusions; pressure sensors; residues; sealing; Accelerometers; Adhesives; Fabrication; Hydrogen; Piezoresistance; Resonance; Seals; Sensor phenomena and characterization; Silicon; Testing;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
DOI :
10.1109/SOLSEN.1992.228303