DocumentCode
3264732
Title
A miniature microwave detector using advanced micromachining
Author
Christel, L.A. ; Petersen, K.
Author_Institution
Lucas NovaSensor, Fremont, CA, USA
fYear
1992
fDate
22-25 June 1992
Firstpage
144
Lastpage
147
Abstract
A process for volume manufacturing of a silicon micromachined microwave detector is described. The device is utilized as a power sensor element at frequencies up to 20 GHz. The fabrication process integrates a number of advanced micromachining techniques including silicon fusion bonding, buried silicon nitride layers, epitaxy on fusion bonded wafers, anisotropic etching with electrochemical etch-stop techniques including ´etch-through´ areas for flying beam leads, thin film resistors and gold plating.<>
Keywords
elemental semiconductors; etching; integrated circuit technology; microwave detectors; semiconductor technology; silicon; wafer bonding; 20 GHz; Au plating; Si; anisotropic etching; buried Si/sub x/N/sub y/ layers; electrochemical etch-stop; epitaxy; flying beam leads; fusion bonding; micromachining; miniature microwave detector; power sensor element; thin film resistors; Detectors; Epitaxial growth; Etching; Fabrication; Frequency; Manufacturing processes; Micromachining; Microwave devices; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Print_ISBN
0-7803-0456-X
Type
conf
DOI
10.1109/SOLSEN.1992.228305
Filename
228305
Link To Document