Title :
High performance resonant tunneling diode on a new material structure
Author :
Jianlin, Wang ; Zhongli, Liu ; Liangchen, Wang ; Yiping, Zeng ; Fuhua, Yang ; Yunxia, Bai
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
A new material structure with Al0.22Ga0.78As/In0.15Ga0.85As/GaAs emitter spacer layer and GaAs/In0.15Ga0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio (PVCR) is 7.44 for RTD analysis on these results suggests that the material structure will be helpful to improve the quality of RTD.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum interference phenomena; resonant tunnelling diodes; semiconductor quantum wells; Al0.22Ga0.78As-In0.15Ga0.85As-GaAs; Al0.22Ga0.78As/In0.15Ga0.85As/GaAs emitter spacer layer; DC characterization; GaAs-In0.15Ga0.85As-GaAs; GaAs/In0.15Ga0.85As/GaAs well; RTD analysis; peak-to-valley current ratio; quantum effect; resonant tunneling diode; Conducting materials; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Resonance; Resonant tunneling devices; Semiconductor diodes; Semiconductor materials; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435088
