• DocumentCode
    3264770
  • Title

    Hinged polysilicon structures with integrated CMOS TFTs

  • Author

    Pister, Kristofer S J

  • Author_Institution
    Electron. Res. Lab., California Univ., Berkeley, CA, USA
  • fYear
    1992
  • fDate
    22-25 June 1992
  • Firstpage
    136
  • Lastpage
    139
  • Abstract
    The surface micromachining process described can produce a variety of microelectromechanical components, including CMOS thin film transistors and three dimensional polysilicon structures with large features and high detail in all three dimensions. Polysilicon structural elements are made with integrated hinges, which allow three dimensional structures to be erected out of the plane of the wafer. CMOS transistors are integrated directly in the structural thin films, and flexible polysilicon elements electrically connect the structures to the substrate. Some batch assembly of the structural elements has been demonstrated, and a first generation CAD system has been developed to model the structural half of the process.<>
  • Keywords
    CMOS integrated circuits; circuit CAD; elemental semiconductors; integrated circuit technology; micromechanical devices; semiconductor technology; silicon; thin film transistors; 3D; CAD; CMOS thin film transistors; integrated hinges; microelectromechanical components; polysilicon structures; surface micromachining; three dimensional polysilicon structures; Actuators; Assembly; CMOS process; Circuits; Etching; Fasteners; Plasma applications; Sensor phenomena and characterization; Substrates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
  • Conference_Location
    Hilton Head Island, SC, USA
  • Print_ISBN
    0-7803-0456-X
  • Type

    conf

  • DOI
    10.1109/SOLSEN.1992.228307
  • Filename
    228307