DocumentCode
3264770
Title
Hinged polysilicon structures with integrated CMOS TFTs
Author
Pister, Kristofer S J
Author_Institution
Electron. Res. Lab., California Univ., Berkeley, CA, USA
fYear
1992
fDate
22-25 June 1992
Firstpage
136
Lastpage
139
Abstract
The surface micromachining process described can produce a variety of microelectromechanical components, including CMOS thin film transistors and three dimensional polysilicon structures with large features and high detail in all three dimensions. Polysilicon structural elements are made with integrated hinges, which allow three dimensional structures to be erected out of the plane of the wafer. CMOS transistors are integrated directly in the structural thin films, and flexible polysilicon elements electrically connect the structures to the substrate. Some batch assembly of the structural elements has been demonstrated, and a first generation CAD system has been developed to model the structural half of the process.<>
Keywords
CMOS integrated circuits; circuit CAD; elemental semiconductors; integrated circuit technology; micromechanical devices; semiconductor technology; silicon; thin film transistors; 3D; CAD; CMOS thin film transistors; integrated hinges; microelectromechanical components; polysilicon structures; surface micromachining; three dimensional polysilicon structures; Actuators; Assembly; CMOS process; Circuits; Etching; Fasteners; Plasma applications; Sensor phenomena and characterization; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Print_ISBN
0-7803-0456-X
Type
conf
DOI
10.1109/SOLSEN.1992.228307
Filename
228307
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