Modeling of magnetic-field sensitive devices using circuit simulation tools

Author

Salim, A. ; Manku, T. ; Nathan, A. ; Kung, W.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

1992

fDate

22-25 June 1992

Firstpage

94

Lastpage

97

Abstract

An accurate but extremely simple and versatile technique for the analysis of magnetic field sensors is presented. A circuit model which allows simulation of galvanomagnetic carrier transport is developed, and has been successfully applied to a variety of magnetic field sensors, such as Hall-effect devices and bipolar magnetotransistors. This approach is attractive because device analysis and subsequent optimization can be performed in a circuit simulation environment; a feature not available with rigorous numerical approaches.<>

Keywords

Hall effect transducers; bipolar transistors; circuit analysis computing; digital simulation; electric sensing devices; magnetic field measurement; Hall-effect devices; bipolar magnetotransistors; circuit simulation; galvanomagnetic carrier transport; magnetic-field sensitive devices; optimization; semiconductor sensor; Analytical models; Circuit simulation; Computational modeling; Magnetic analysis; Magnetic circuits; Magnetic devices; Magnetic domains; Magnetic fields; Magnetic semiconductors; Magnetic sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Print_ISBN

0-7803-0456-X

Type

conf

DOI

10.1109/SOLSEN.1992.228317

Filename

228317