Title :
Temperature dependence of gain characteristics in 1.3-μm AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers
Author :
Higashi, T. ; Fujii, T. ; Yamamoto, T. ; Ogita, S. ; Kobayashi, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Summary form only given. So far 1.3 μm AlGaInAs-InP strained MQW lasers have achieved high characteristic temperature T0 of 120 K and high operating temperature of 185 C. In this paper, we evaluated temperature dependence of the gain characteristics in AlGaInAs-InP lasers, and found that the high T0 was caused by the smaller temperature dependence of the spontaneous emission efficiency than that of GaInAsP-InP lasers
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; spontaneous emission; 1.3 mum; 185 C; AlGaInAs-InP; AlGaInAs-InP lasers; AlGaInAs-InP strained MQW lasers; AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers; GaInAsP-InP; gain characteristics; high T0; high characteristic temperature; high operating temperature; smaller temperature dependence; spontaneous emission efficiency; temperature dependence; Current density; Indium phosphide; Laboratories; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Temperature dependence; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645308
