Carrier heating and the power independent linewidth in semiconductor lasers

Author

Ongstad, Andrew P. ; Dente, Gregory C. ; Tilton, Michael L.

Author_Institution

Rocketdtyne Tech. Services, Albuquerque, NM, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

138

Abstract

In this paper we present linewidth measurements on a double-heterostructure AlGaAs laser diode as a function of temperature, and report on the experimentally determined Schawlow-Townes linewidth. Further, we develop a model to explain both the origin of the power-independent linewidth, and the reasons why its magnitude increases with decreasing lattice temperature

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; laser variables measurement; semiconductor device models; semiconductor device testing; semiconductor lasers; spectral line breadth; AlGaAs; Schawlow-Townes linewidth; carrier heating; decreasing lattice temperature; double-heterostructure AlGaAs laser diode; linewidth measurements; power independent linewidth; power-independent linewidth; semiconductor lasers; Diode lasers; Fluctuations; Heating; Laser noise; Lattices; Power lasers; Power measurement; Semiconductor lasers; Spontaneous emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645309

Filename

645309