DocumentCode :
3265261
Title :
Enhanced Hot Carrier Effects In Scaled Flash Memory Devices
Author :
Chen, C. ; Liu, Z. ; Ma, T.P.
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
162
Lastpage :
166
Keywords :
Charge measurement; Charge pumps; Current measurement; EPROM; Flash memory; Hot carrier effects; Hot carriers; Microelectronics; Stress; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614750
Filename :
614750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3265261
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