DocumentCode :
3265444
Title :
A Comparative Pmos Study Of 33a Nitrided Oxides Prepared By Either N20 Or Nitrogen Implant Before Gate Oxidation For 0.18-o.13/spl mu/m Cmos Technologies
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
167
Lastpage :
171
Keywords :
Annealing; Boron; CMOS technology; Degradation; Design for quality; Dielectric materials; Implants; Instruments; Nitrogen; Oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614751
Filename :
614751
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3265444
