Power diode HYBRID model with forward and reverse recovery for use in circuit simulators

Author

Goebel, H. ; Hoffmann, K.

Author_Institution

Bundeswehr Munich Univ., Neubiberg, Germany

fYear

1992

fDate

23-27 Feb 1992

Firstpage

426

Lastpage

432

Abstract

A method called the HYBRID method, which solves the differential equations describing the semiconductor partly analytically and partly numerically, is presented. The advantages of this model compared with other ones are: continuous description of the switching process; simple simulator equations (no convergence problems); accurate solution of the ambipolar diffusion equation; and adaptability of the method to other devices. Important effects such as conductivity modulation and field dependence of charge carrier velocity are considered as well as the effect of mobile charge carriers in the space charge region. The model is programmed in FORTRAN 77 and implemented in the SABER circuit simulator, and has been verified for different ranges of operation

Keywords

circuit analysis computing; differential equations; power electronics; semiconductor device models; semiconductor diodes; software packages; FORTRAN 77; HYBRID; SABER; ambipolar diffusion equation; charge carrier velocity; circuit analysis computing; conductivity modulation; differential equations; field dependence; forward recovery; mobile charge carriers; power diodes; reverse recovery; semiconductor device models; space charge region; switching; Analytical models; Charge carriers; Circuit simulation; Computational modeling; Conductivity; Differential equations; Power electronics; Semiconductor diodes; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual

Conference_Location

Boston, MA

Print_ISBN

0-7803-0485-3

Type

conf

DOI

10.1109/APEC.1992.228379

Filename

228379