DocumentCode
3265931
Title
A packaged MOS power device with an integral protection chip
Author
Mietus, David F. ; Clark, Lowell E. ; Davies, Robert B.
Author_Institution
Motorola Semicond. Products Sector, Phoenix, AZ, USA
fYear
1992
fDate
23-27 Feb 1992
Firstpage
419
Lastpage
425
Abstract
A packaged MOS power device having a protective integrated circuit mounted on the gate lead of the package is described. The protective circuit prevents gate overvoltage and provides for rapid gate discharge during commutation, overtemperature, or overvoltage in the on-state
Keywords
commutation; metal-insulator-semiconductor devices; overcurrent protection; packaging; power electronics; IGBT; MOSFET; commutation; gate discharge; gate lead; gate overvoltage; integral protection chip; overtemperature; packaged MOS power device; packaging; power electronics; power transistors; Assembly; Bipolar integrated circuits; Commutation; Insulated gate bipolar transistors; Integrated circuit packaging; Integrated circuit technology; Lead compounds; Protection; Semiconductor device packaging; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual
Conference_Location
Boston, MA
Print_ISBN
0-7803-0485-3
Type
conf
DOI
10.1109/APEC.1992.228380
Filename
228380
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