DocumentCode
3265975
Title
A study of IGBT turn-off behavior and switching losses for zero-voltage and zero-current switching
Author
Chen, Keming ; Stuart, Thomas A.
Author_Institution
REM Technologies, Schenectady, NY, USA
fYear
1992
fDate
23-27 Feb 1992
Firstpage
411
Lastpage
418
Abstract
The switching losses of insulated gate bipolar transistors (IGBTs) with zero voltage and zero current switching are compared with the switching losses of IGBTs with hard switching. The turn-off behavior of the IGBT is studied in detail for both zero voltage and zero current switching. The effect of a reverse current during turn-off is also investigated for zero current switching
Keywords
insulated gate bipolar transistors; losses; power transistors; semiconductor device testing; switching circuits; IGBT turn-off behavior; ZCS; ZVS; power transistors; reverse current; semiconductor device testing; switching losses; zero current switching; zero voltage switching; Diodes; Insulated gate bipolar transistors; MOSFETs; Pulse width modulation converters; Switching circuits; Switching converters; Switching loss; Tail; Zero current switching; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual
Conference_Location
Boston, MA
Print_ISBN
0-7803-0485-3
Type
conf
DOI
10.1109/APEC.1992.228381
Filename
228381
Link To Document