Title :
A study of IGBT turn-off behavior and switching losses for zero-voltage and zero-current switching
Author :
Chen, Keming ; Stuart, Thomas A.
Author_Institution :
REM Technologies, Schenectady, NY, USA
Abstract :
The switching losses of insulated gate bipolar transistors (IGBTs) with zero voltage and zero current switching are compared with the switching losses of IGBTs with hard switching. The turn-off behavior of the IGBT is studied in detail for both zero voltage and zero current switching. The effect of a reverse current during turn-off is also investigated for zero current switching
Keywords :
insulated gate bipolar transistors; losses; power transistors; semiconductor device testing; switching circuits; IGBT turn-off behavior; ZCS; ZVS; power transistors; reverse current; semiconductor device testing; switching losses; zero current switching; zero voltage switching; Diodes; Insulated gate bipolar transistors; MOSFETs; Pulse width modulation converters; Switching circuits; Switching converters; Switching loss; Tail; Zero current switching; Zero voltage switching;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-0485-3
DOI :
10.1109/APEC.1992.228381
