مرکز منطقه ای اطلاع رساني علوم و فناوري - Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs

DocumentCode :

3265998

Title :

Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs

Author :

Kim, B.Y. ; Liu, I.M. ; Min, B.W. ; Luan, H.F. ; Gardner, M. ; Fulford, J. ; Kwong, D.L.

fYear :

1997

fDate :

3-5 June 1997

Firstpage :

182

Lastpage :

187

Keywords :

Boron; CMOS process; Degradation; Design for quality; Furnaces; MOSFETs; Microelectronics; Stress; Temperature dependence; Threshold voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location :

Taipei, Taiwan

ISSN :

1524-766X

Print_ISBN :

0-7803-4131-7

Type :

conf

DOI :

10.1109/VTSA.1997.614754

Filename :

614754

Link To Document :