Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs

Author

Kim, B.Y. ; Liu, I.M. ; Min, B.W. ; Luan, H.F. ; Gardner, M. ; Fulford, J. ; Kwong, D.L.

fYear

1997

fDate

3-5 June 1997

Firstpage

182

Lastpage

187

Keywords

Boron; CMOS process; Degradation; Design for quality; Furnaces; MOSFETs; Microelectronics; Stress; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-4131-7

Type

DOI

10.1109/VTSA.1997.614754

Filename

614754

Link To Document