مرکز منطقه ای اطلاع رساني علوم و فناوري - The Effects Of Passivation And Post Passivation Anneal On The Integrity Of Thin Gate Oxides

DocumentCode :

3266206

Title :

The Effects Of Passivation And Post Passivation Anneal On The Integrity Of Thin Gate Oxides

Author :

Gelatos, Carol ; Tseng, Hsing-Huang ; Filipiak, Stanley ; Sieloj, D. ; Grant, Jack ; Tobin, Philip ; Cotton, Randy

fYear :

1997

fDate :

3-5 June 1997

Firstpage :

188

Lastpage :

192

Keywords :

Annealing; Assembly; Compressive stress; Hydrogen; Interface states; Optical films; Passivation; Surfaces; Tensile stress; Threshold voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location :

Taipei, Taiwan

ISSN :

1524-766X

Print_ISBN :

0-7803-4131-7

Type :

conf

DOI :

10.1109/VTSA.1997.614755

Filename :

614755

Link To Document :