DocumentCode :
3266206
Title :
The Effects Of Passivation And Post Passivation Anneal On The Integrity Of Thin Gate Oxides
Author :
Gelatos, Carol ; Tseng, Hsing-Huang ; Filipiak, Stanley ; Sieloj, D. ; Grant, Jack ; Tobin, Philip ; Cotton, Randy
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
188
Lastpage :
192
Keywords :
Annealing; Assembly; Compressive stress; Hydrogen; Interface states; Optical films; Passivation; Surfaces; Tensile stress; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614755
Filename :
614755
Link To Document :
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